Universality and difference of electronic and spin transport properties at the irradiated oxide surface. (23rd August 2017)

• Record Type: Journal Article
• Authors: Wang, Qiuru; Zhang, Wanli; Peng, Bin
• Is Part Of: Journal of physics. Volume 50:Number 37(2017)
• Publication Date: 2017-08-23
• Subjects: ion irradiation -- transition metal oxide -- oxygen vacancy -- conducting behavior -- inverse Rashba–Edelstein effect; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa7d77
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The ion irradiation technique is utilized to modify the surface structure of transition metal oxides (TMOs), including SrTiO3 and TiO2 . After low-energy Ar + ion bombardment, oxygen vacancies are introduced into the TMO surface layer, and their resistance decreases with increasing irradiation time. For the two oxides, the temperature-dependent resistivity exhibits different conducting behaviors. Due to the generation of an electron-doped quasi-2D surface layer, the voltage signals of the inverse Rashba–Edelstein effect are extracted in the ion-irradiated TMO with ferromagnetic permalloy films, and the spin transport parameters are respectively calculated from the ferromagnetic resonance measurement data.