A magnetic shift register with out-of-plane magnetized layers. (31st August 2017)

• Record Type: Journal Article
• Authors: Mansell, R; Beguivin, A; Fernández-Pacheco, A; Lee, JH; Petit, D; Cowburn, RP
• Is Part Of: Nanotechnology. Volume 28:Number 38(2017)
• Publication Date: 2017-08-31
• Subjects: nanomagnetic logic -- perpendicularly magnetized materials -- magnetic nanowires -- dipolar coupling; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa7f63
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Using out-of-plane magnetized layers, a lateral shift register made from discrete elements is demonstrated. By carefully designing the in-plane shape of the elements which make up the shift register, both the position of nucleation of new domains and the coercivity of the element can be controlled. The dipole field from a neighboring element, placed tens of nanometers away, creates a bias field on the nucleation site, which can be used to create a NOT gate. By chaining these NOT gates together, a shift register can be created where data bits consisting of neighboring layers with aligned magnetization are propagated synchronously under a symmetric applied magnetic field. The operation of a 16 element shift register is shown, including field coupled data injection.