Cite
HARVARD Citation
Fiorenza, P. et al. (2018). Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis. Nanotechnology. p. . [Online].
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Fiorenza, P. et al. (2018). Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis. Nanotechnology. p. . [Online].