Cite
HARVARD Citation
Gu, Z. et al. (2018). 20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate. Applied physics express. p. . [Online].
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Gu, Z. et al. (2018). 20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate. Applied physics express. p. . [Online].