Feature-rich magneto-electronic properties of bismuthene. (25th June 2018)

• Record Type: Journal Article
• Authors: Chen, Szu-Chao; Wu, Jhao-Ying; Lin, Ming-Fa
• Is Part Of: New journal of physics. Volume 20:Number 6(2018:Jun.)
• Publication Date: 2018-06-25
• Subjects: bismuthene -- generalized tight-binding model -- magnetic quantizations; Physics -- Periodicals; Physics; Periodicals; 530.05
• DOI: 10.1088/1367-2630/aaca24
• Languages: English
• ISSNs: 1367-2630

Abstract

Abstract: The generalized tight-binding model, being based on the spin-dependent sublattices, is developed to explore the magnetic quantization of monolayer bismuthene. The sp 3 orbital hybridizations, site energies, nearest and next-nearest hopping integrals, spin–orbital interactions and magnetic field ( B z z ̂ ) are taken into account simultaneously. There exist three groups of low-lying Landau levels (LLs), in which they are mainly from the (6p x, 6p y, 6p z ) orbitals, and only the first group belongs to the unoccupied conduction states. Furthermore, each group is further split into the spin-up- and spin-down-dominated subgroups. The six subgroups present the rich and unique B z -dependent LL energy spectra, covering the specific or arc-shaped B z -dependences, the normal/irregular spin–split energies, and the non-crossing/crossing/anti-crossing behaviors. Specially, the second group of valence LLs near the Fermi level can create the frequent inter-subgroup LL anti-crossings since the main and side modes are comparable. The main features of energy spectra can create the special structures in density of states.