Flexible InGaZnO TFT devices obtained via humid-UV irradiation with an aqueous-fluoroalcoholic precursor. (1st November 2016)

• Record Type: Journal Article
• Authors: Ogura, Shintaro; Cheong, Heajeong; Uemura, Sei; Ushijima, Hirobumi; Fukuda, Nobuko
• Is Part Of: Flexible and printed electronics. Volume 1:Number 4(2016)
• Publication Date: 2016-11-01
• Subjects: InGaZnO -- solution process -- surface tension -- humid-UV process -- flexible transparent film; Flexible electronics -- Periodicals; Printed electronics -- Periodicals; Flexible electronics; Printed electronics; Electronic journals; Periodicals; 621.381
• DOI: 10.1088/2058-8585/1/4/045001
• Languages: English
• ISSNs: 2058-8585

Abstract

Abstract: We designed an aqueous-fluoroalcoholic InGaZnO precursor for obtaining thin-film transistors (TFTs) on a flexible plastic film by spin-coating and low-temperature annealing processes without inert gas conditions. The precursor shows a low surface tension (23.7 mN m −1 ), which is advantageous for homogeneous coating onto plastic film. Thermal analysis of the precursor indicates formation of metal oxides at less than 300 °C. InGaZnO TFTs were obtained from the precursor by annealing at 300 °C via UV irradiation under humid atmosphere on a transparent polyimide film as well as on a p–Si substrate. The bottom-gate top-contact TFTs on the p–Si show 5.1 cm 2 V −1 s −1 of the average saturation mobility. The top-gate top-contact TFTs on the transparent polyimide film drive with 0.99 cm 2 V −1 s −1 of the average saturation mobility. The transparent polyimide film maintains flexibility even after humid-UV irradiation and annealing processes. The InGaZnO TFTs on the transparent polyimide film show more than 80% transmittance in the visible light region between 400 and 780 nm.