Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping. (25th September 2018)

• Record Type: Journal Article
• Authors: Berencén, Y; Prucnal, S; Möller, W; Hübner, R; Rebohle, L; Schönherr, T; Khan, M Bilal; Wang, M; Glaser, M; Georgiev, Y M; Erbe, A; Lugstein, A; Helm, M; Zhou, S
• Is Part Of: Nanotechnology. Volume 29:Number 47(2018)
• Publication Date: 2018-09-25
• Subjects: nanowires -- ion beam doping -- flash lamp annealing; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aadfb6
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: A method for cross-sectional doping of individual Si/SiO2 core/shell nanowires (NWs) is presented. P and B atoms are laterally implanted at different depths in the Si core. The healing of the implantation-related damage together with the electrical activation of the dopants takes place via solid phase epitaxy driven by millisecond-range flash lamp annealing. Electrical measurements through a bevel formed along the NW enabled us to demonstrate the concurrent formation of n- and p-type regions in individual Si/SiO2 core/shell NWs. These results might pave the way for ion beam doping of nanostructured semiconductors produced by using either top-down or bottom-up approaches.