Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides. (16th January 2017)

• Record Type: Journal Article
• Authors: Molas, M R; Faugeras, C; Slobodeniuk, A O; Nogajewski, K; Bartos, M; Basko, D M; Potemski, M
• Is Part Of: 2D materials. Volume 4:Number 2(2017)
• Publication Date: 2017-01-16
• Subjects: transition metal dichalcogenides monolayers -- tungsten diselenide -- tungsten disulfide -- molybdenum diselenide -- molybdenum disulfide -- dark excitons -- Voigt configuration; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/aa5521
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We present low-temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field B applied to monolayers of different semiconducting transition metal dichalcogenides. For WSe2 and WS2 monolayers, the dark exciton emission is observed at ̃50 meV below the bright exciton peak and displays a characteristic doublet structure whose intensity grows with B 2, while no magnetic field induced emission peaks appear for MoSe2 monolayer. Our experiments also show that the MoS2 monolayer has a dark exciton ground state with a dark-bright exciton splitting energy of ̃100 meV.