Interfacial engineering with ultrathin poly (9, 9-di-n-octylfluorenyl-2, 7-diyl) (PFO) layer for high efficient perovskite light-emitting diodes. (11th January 2018)

• Record Type: Journal Article
• Authors: Lin, Chunyan; Chen, Ping; Xiong, ZiYang; Liu, Debei; Wang, Gang; Meng, Yan; Song, Qunliang
• Is Part Of: Nanotechnology. Volume 29:Number 7(2018)
• Publication Date: 2018-01-11
• Subjects: CH3NH3PbBr3 perovskite -- light-emitting -- conjugated conducting polymers -- interfacial engineering; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa9fa3
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Organic–inorganic hybrid perovskites have attracted great attention in the field of lighting and display due to their very high color purity and low-cost solution-process. Researchers have done a lot of work in realizing high performance electroluminescent devices. However, the current efficiency (CE) of methyl-ammonium lead halide perovskite light-emitting diodes (PeLEDs) still needs to be improved. Herein, we demonstrate the enhanced performance of PeLEDs through introducing an ultrathin poly(9, 9-di-n-octylfluorenyl-2, 7-diyl) (PFO) buffer layer between poly(3, 4-ethylendioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and CH3 NH3 PbBr3 perovskite. Compared to the reference device without PFO, the optimal device luminous intensity, the maximum CE, and the maximum external quantum efficiency increases from 8139 cd m −2 to 30 150 cd m −2, from 7.20 cd A −1 (at 6.8 V) to 10.05 cd A −1 (at 6.6 V), and from 1.73% to 2.44%, respectively. The ultrathin PFO layer not only reduces the exciton quenching at the interface between the hole-transport layer and emission layer, but also passivates the shallow-trap ensure increasing hole injection, as well as increases the coverage of perovskite film.