Terahertz excitation spectra of GaAsBi alloys. (6th September 2018)

• Record Type: Journal Article
• Authors: Pačebutas, V; Stanionytė, S; Arlauskas, A; Norkus, R; Butkutė, R; Geižutis, A; Čechavičius, B; Krotkus, A
• Is Part Of: Journal of physics. Volume 51:Number 47(2018)
• Publication Date: 2018-09-06
• Subjects: THz excitation spectroscopy -- band offset -- GaAsBi -- MBE -- HR-XRD; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aadb11
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Terahertz excitation spectroscopy was used for the determination of energy separation between the main (Γ) and subsidiary ( L and X ) conduction band valleys of GaAs1− x Bi x . The samples used in this study were 1 µ m–1.5 µ m thick bismide layers grown by Molecular Beam Epitaxy on GaAs substrates. They contained up to 8% of bismuth as determined by high resolution x-ray diffraction (HR-XRD) and reciprocal space mapping (RSM), taking into account the layer relaxation. It was found that both subsidiary conduction band valleys at L and X points of the Brillouin zone move away from the conduction band minimum at rates of 18 meV/%Bi and 25 meV/%Bi, respectively, with increasing Bi content in the alloy.