Electric field modulations of band alignments in arsenene/Ca(OH)2 heterobilayers for multi-functional device applications. (18th September 2017)

• Record Type: Journal Article
• Authors: Xia, Congxin; Xiong, Wenqi; Du, Juan; Peng, Yuting; Wei, Zhongming; Li, Jingbo
• Is Part Of: Journal of physics. Volume 50:Number 41(2017)
• Publication Date: 2017-09-18
• Subjects: van der Waals heterobilayers -- arsenene/Ca(OH)2 -- type-I band alignment -- multi-functional devices; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa837c
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: van der Waals heterobilayers have been considered to be an ideal option to enhance the electronic properties of original two-dimensional (2D) materials. We predicate theoretically that the 2D arsenene/Ca(OH)2 heterobilayers possess the characteristics of the indirect gap of 2.28 eV and type-I band alignment. Moreover, the electric field can induce the indirect–direct band gap transition of arsenene/Ca(OH)2 heterobilayers. Interestingly, the band alignment transition from type-I to type-II and type-III can be also tailored using the strength and direction of the electric field. These results provide the possibility of realizing the 2D materials-based multi-functional optoelectronic devices by applying electrostatic gating.