Electronic properties of graphene/p-silicon Schottky junction. (4th June 2018)

• Record Type: Journal Article
• Authors: Luongo, Giuseppe; Di Bartolomeo, Antonio; Giubileo, Filippo; Chavarin, Carlos Alvarado; Wenger, Christian
• Is Part Of: Journal of physics. Volume 51:Number 25(2018)
• Publication Date: 2018-06-04
• Subjects: Schottky junction -- graphene -- p-type silicon -- diode -- photoresponse -- barrier height; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aac562
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We fabricate graphene/p-Si heterojunctions and characterize their current–voltage properties in a wide temperature range. The devices exhibit Schottky diode behaviour with a modest rectification factor up to . The Schottky parameters are estimated in the framework of the thermionic emission theory using Cheung's and Norde's methods. At room temperature, we obtain an ideality factor of about 2.5 and a Schottky barrier height of 0.18 eV, which reduces at lower temperatures. We shed light on the physical mechanisms responsible for the low barrier, discussing the p-doping of graphene caused by the transfer process, the exposure to air and the out-diffusion of boron from the Si substrate. We finally propose a band model that fully explains the experimental current–voltage features, included a plateau observed in reverse current at low temperatures.