Elaboration and characterization of CuInSe2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application. (24th January 2018)

• Record Type: Journal Article
• Authors: Saïdi, H; Boujmil, M F; Durand, B; Lazzari, J-L; Bouaïcha, M
• Is Part Of: Materials research express. Volume 5:Number 1(2018)
• Publication Date: 2018-01-24
• Subjects: bifacial solar cell -- CIS/c-Si -- electrodeposition -- galvanostatic mode -- rapid thermal annealing -- heterojunction solar cell; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/aaa604
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Bifacial solar cells combining a heterojunction cell on the upper side and crystalline silicon (c-Si) homojunction on the backside are very interesting devices to a more efficient use of the solar radiation. Cu(In, Ga)Se2 (n)/c-Si(p)/c-Si(n + ) or CuInSe2 (n)/c-Si(p)/c-Si(n + ) are very attractive heterojunctions to reach this target. In this work, a novel attempt has been made to grow CuInSe2 thin films on p-Si (100) substrate using one-step electrodeposition route with galvanostatic mode. The as-deposited samples were amorphous by nature which implies a rapid thermal annealing step. The effect of annealing temperature on the structural, morphological, optical and electrical properties of the fabricated hetero-structure CuInSe2 /c-Si (100) was investigated by x-ray diffraction (XRD), scanning electron microscopy, energy dispersive spectroscopy (EDS) and UV–visible spectroscopy. XRD indicates that CuInSe2 films having single phase chalcopyrite with tetragonal crystal structure are obtained at 350 °C. Values of energy band gap of films at various annealing temperature were estimated to be in the range 0.94–1.01 eV. The optical parameters such as refractive index n ( λ ) and extinction coefficient k ( λ ) were estimated using an appropriate optical model. The AM1.5 current density–voltage characteristic of the fabricated Al/CuInSe2 /c-Si (100) hetero-junction solar cell exhibits a short-circuit current density J sc of 4.06 mA cm −2, an open circuit voltage V oc of 0.28 V, a fill factor FF of 36.72% and a solar conversion efficiency η of 0.41%.