Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer. (11th January 2017)

• Record Type: Journal Article
• Authors: Seo, Hong-Kyu; Kim, Kyunghun; Min, Sung-Yong; Lee, Yeongjun; Park, Chan Eon; Raj, Rishi; Lee, Tae-Woo
• Is Part Of: 2D materials. Volume 4:Number 2(2017)
• Publication Date: 2017-01-11
• Subjects: graphene -- solid carbon source -- graphene-dielectric bi-layer -- polydimethylsiloxane -- organic field-effect transistor; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/aa5408
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: To facilitate the utilization of graphene films in conventional semiconducting devices (e.g. transistors and memories) which includes an insulating layer such as gate dielectric, facile synthesis of bi-layers composed of a graphene film and an insulating layer by one-step thermal conversion will be very important. We demonstrate a simple, inexpensive, scalable and patternable process to synthesize graphene-dielectric bi-layer films from solution-processed polydimethylsiloxane (PDMS) under a Ni capping layer. This method fabricates graphene-dielectric bi-layer structure simultaneously directly on substrate by thermal conversion of PDMS without using additional graphene transfer and patterning process or formation of an expensive dielectric layer, which makes the device fabrication process much easier. The graphene-dielectric bi-layer on a conducting substrate was used in bottom-contact pentacene field-effect transistors that showed ohmic contact and small hysteresis. Our new method will provide a way to fabricate flexible electronic devices simply and inexpensively.