Thickness dependent interlayer transport in vertical MoS2 Josephson junctions. (1st July 2016)

• Record Type: Journal Article
• Authors: Island, Joshua O; Steele, Gary A; Zant, Herre S J van der; Castellanos-Gomez, Andres
• Is Part Of: 2D materials. Volume 3:Number 3(2016)
• Publication Date: 2016-07-01
• Subjects: molybdenum disulfide -- MoS2 -- Andreev reflection -- Josephson junction -- thickness dependence -- vertical junction -- tunnel barrier; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/3/3/031002
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2 )—molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 μ A) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe. We anticipate that this device architecture could be easily extended to other 2D materials.