Cite
HARVARD Citation
Ren, B. et al. (2017). Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance. Applied physics express. p. . [Online].
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Ren, B. et al. (2017). Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance. Applied physics express. p. . [Online].