Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source. (16th October 2017)

• Record Type: Journal Article
• Authors: Cheng, Man Kit; Liang, Jing; Lai, Ying Hoi; Pang, Liang Xi; Liu, Yi; Shen, Jun Ying; Hou, Jian Qiang; Lin He, Qing; Xu, Bo Chao; Chen, Jun Shu; Wang, Gan; Liu, Chang; Lortz, Rolf; Sou, Iam Keong
• Is Part Of: Nanotechnology. Volume 28:Number 45(2017)
• Publication Date: 2017-10-16
• Subjects: large-area epitaxial growth -- monolayer MoSe2 -- incandescent Mo source; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa8b81
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence (PL), reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm −1 was identified. Results from Raman spectroscopy, PL, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element.