Cite
HARVARD Citation
Kim, S. et al. (2018). Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device. Nanotechnology. p. . [Online].
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Kim, S. et al. (2018). Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device. Nanotechnology. p. . [Online].