Cite
HARVARD Citation
Zou, X. et al. (2018). A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2. Nanotechnology. p. . [Online].
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Zou, X. et al. (2018). A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2. Nanotechnology. p. . [Online].