Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process. (14th November 2016)

• Record Type: Journal Article
• Authors: Ueda, Osamu; Ikenaga, Noriaki; Koshi, Kimiyoshi; Iizuka, Kazuyuki; Kuramata, Akito; Hanada, Kenji; Moribayashi, Tomoya; Yamakoshi, Shigenobu; Kasu, Makoto
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 12(2016:Dec.)
• Publication Date: 2016-11-14
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.1202BD
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We have structurally evaluated β-Ga2 O3 crystals grown by edge-defined film-fed growth process using etch pitting, focused ion beam scanning ion microscopy, transmission electron microscopy, and related techniques. We found three types of defects: arrays of edge dislocations corresponding to etch pit arrays on -oriented wafers, platelike nanopipes corresponding to etch pits revealed on the (010)-oriented wafers, and twins including twin lamellae.