Cite
HARVARD Citation
Takagi, K. et al. (2018). First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface. Japanese journal of applied physics. p. . [Online].
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Takagi, K. et al. (2018). First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface. Japanese journal of applied physics. p. . [Online].