Cite
HARVARD Citation
Hu, X. et al. (2018). 1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts. 2D materials. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Hu, X. et al. (2018). 1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts. 2D materials. p. . [Online].