Floquet high Chern insulators in periodically driven chirally stacked multilayer graphene. (28th March 2018)

• Record Type: Journal Article
• Authors: Li, Si; Liu, Cheng-Cheng; Yao, Yugui
• Is Part Of: New journal of physics. Volume 20:Number 3(2018:Mar.)
• Publication Date: 2018-03-28
• Subjects: Floquet high Chern insulators -- periodically driven systems -- chirally stacked multilayer graphene -- quantum anomalous Hall insulators -- a valley Hall insulator -- circularly polarized light; Physics -- Periodicals; Physics; Periodicals; 530.05
• DOI: 10.1088/1367-2630/aab2c7
• Languages: English
• ISSNs: 1367-2630

Abstract

Abstract: Chirally stacked N -layer graphene is a semimetal with ± p N band-touching at two nonequivalent corners in its Brillioun zone. We predict that an off-resonant circularly polarized light (CPL) drives chirally stacked N -layer graphene into a Floquet Chern insulators (FCIs), aka quantum anomalous Hall insulators, with tunable high Chern number C F = ± N and large gaps. A topological phase transition between such a FCI and a valley Hall (VH) insulator with high valley Chern number C v = ± N induced by a voltage gate can be engineered by the parameters of the CPL and voltage gate. We propose a topological domain wall between the FCI and VH phases, along which perfectly valley-polarized N -channel edge states propagate unidirectionally without backscattering.