2D vertical field-effect transistor. (17th October 2018)

• Record Type: Journal Article
• Authors: Felice, D Di; Dappe, Y J
• Is Part Of: Nanotechnology. Volume 29:Number 50(2018)
• Publication Date: 2018-10-17
• Subjects: graphene and 2D materials -- density functional theory -- electronic transport -- transistor; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aae406
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Within the framework of 2D materials, we present four theoretical models of a vertical field-effect transistor (FET) composed of simple alternate graphene and MoS2 layers. The electronic transport properties at a specific graphene/MoS2 interface in each configuration are investigated by focusing in particular on the current as a function of the gate voltage. The gate voltage, simulated with a shift of the bands of a specific layer, allows us to tune the current at the interface and the charge transfer between the planes. This analysis of the charge transfer as a function of the gate voltage reveals a strong connection with the transport characteristics as the slope of the current curve. The analysis of physical phenomena at the graphene/MoS2 interface can further improve the 2D vertical FET performance and contribute to the development of new 2D nanotechnology.