Novel hybrid C/BN two-dimensional heterostructures. (23rd January 2017)

• Record Type: Journal Article
• Authors: Kvashnin, Dmitry G; Kvashnina, Olga P; Avramov, Pavel V; Sorokin, Pavel B; Kvashnin, Alexander G
• Is Part Of: Nanotechnology. Volume 28:Number 8(2017)
• Publication Date: 2017-01-23
• Subjects: graphene -- boron nitride -- two-dimensional materials -- phase transition -- nanometer thick films; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa55e9
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Here we present an investigation of new quasi-two-dimensional heterostructures based on the alternation of bounded carbon and boron nitride layers (C/BN). We carried out a theoretical study of the atomic structure, stability and electronic properties of the proposed heterostructures. Such ultrathin quasi-two-dimensional C/BN films can be synthesized by means of chemically induced phase transition by connection of the layers of multilayered h-BN/graphene van der Waals heterostructures, which is indicated by the negative phase transition pressure in the calculated phase diagrams ( P, T ) of the films. It was shown that the band gap value of the C/BN films spans the infrared and visible spectrum. We hope that the proposed films and fabrication method can be considered as a possible route to obtain nanostructures with a controllable band gap in wide energy range. This makes these materials potentially suitable for a variety of applications, including photovoltaics, photoelectronics and more.