Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact. (12th May 2017)

• Record Type: Journal Article
• Authors: Yang, Yang; Wu, Zhenhua; Yang, Wen; Li, Jun; Chen, Songyan; Li, Cheng
• Is Part Of: Applied physics express. Volume 10:Number 6(2017)
• Publication Date: 2017-05-12
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.063001
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We theoretically investigate the spin injection in different ferromagnet/insulator/n-Si tunnel contacts by using the lattice non-equilibrium Green's function method. We find that the tunnel contacts with low-barrier materials such as TiO2 and Ta2 O5 have far lower resistances than the conventional-barrier materials, resulting in a wider and attainable optimum parameters window for improving the spin-injection efficiency and magnetoresistance ratio of a vertical-spin metal–oxide–semiconductor field-effect transistor. Additionally, we find that the spin-asymmetry coefficient of the TiO2 tunnel contact has a negative value, while that of the Ta2 O5 contact can be tuned between positive and negative values by changing the parameters.