Charging effect at grain boundaries of MoS2. (15th March 2018)

• Record Type: Journal Article
• Authors: Yan, Chenhui; Dong, Xi; Li, Connie H; Li, Lian
• Is Part Of: Nanotechnology. Volume 29:Number 19(2018)
• Publication Date: 2018-03-15
• Subjects: transition metal dichalcogenide -- MoS2 -- grain boundary -- STM/S -- charging effect -- mid-gap states; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aaace9
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Grain boundaries (GBs) are inherent extended defects in chemical vapor deposited (CVD) transition metal dichalcogenide (TMD) films. Characterization of the atomic structure and electronic properties of these GBs is crucial for understanding and controlling the properties of TMDs via defect engineering. Here, we report the atomic and electronic structure of GBs in CVD grown MoS2 on epitaxial graphene/SiC(0001). Using scanning tunneling microscopy/spectroscopy, we find that GBs mostly consist of arrays of dislocation cores, where the presence of mid-gap states shifts both conduction and valence band edges by up to 1 eV. Our findings demonstrate the first charging effect near GBs in CVD grown MoS2, providing insights into the significant impact GBs can have on materials properties.