Threshold voltage manipulation of ZnO-graphene oxide hybrid thin film transistors via Au nanoparticles doping. (10th November 2015)

• Record Type: Journal Article
• Authors: Song, Wooseok; Kim, Ki Woong; Kim, Seong Jun; Min, Bok Ki; Lim, Yi Rang; Myung, Sung; Lee, Sun Sook; Lim, Jongsun; An, Ki-Seok
• Is Part Of: 2D materials. Volume 2:Number 4(2015)
• Publication Date: 2015-11-10
• Subjects: ZnO -- graphene oxide -- hybrid thin film -- thin film transistor; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/2/4/044007
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: In order to fabricate a complementary inverter, precise control of the threshold voltages for n-type semiconductor based thin film transistors (TFTs) is highly required. Here we provided a facile methodology for controlling the threshold voltage of ZnO-based TFTs. Chemically-derived graphene oxide (GO) and Au-decorated GO (Au-GO) flakes were hybridized with solution-processed ZnO thin films to control electron injection determined by the workfunction difference between ZnO and GO or Au-GO. As a result, the threshold voltages for the ZnO, GO/ZnO, and Au-GO/ZnO TFTs were 24 ± 3 V, −11 ± 4 V, and 63 ± 5 V, respectively, which determine depletion or enhancement mode TFTs without any significant change in the field effect mobility and on/off ratio.