WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment. (13th September 2017)

• Record Type: Journal Article
• Authors: Li, Chao; Yan, Xiao; Song, Xiongfei; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng
• Is Part Of: Nanotechnology. Volume 28:Number 41(2017)
• Publication Date: 2017-09-13
• Subjects: heterostructure -- field-effect transistors -- two-dimensional; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa810f
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Heterostructure field-effect transistors (hetero-FETs) are experimentally demonstrated, consisting of van der Waals heterostructure channels based on a 2D semiconductor. By optimally selecting the band alignment of the heterostructure channels, different output characteristics of the hetero-FETs were achieved. In atomically thin WSe2 /MoS2 hetero-FET with staggered energy band, the oscillating transfer characteristic and negative transconductance were realized. With near-broken-gap alignment in the MoTe2 /SnSe2 heterostructure channel, a superior reverse-biased current was obtained in the hetero-FETs, which can be analyzed as typical tunneling current. Our study on the hetero-FET-based atomically thin van der Waals heterostructure channel, provides significant inspiration and reference to novel heterostructure FETs.