Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition. (8th December 2016)

• Record Type: Journal Article
• Authors: Zhao, Jianguo; Zhang, Xiong; Dai, Qian; Wang, Nan; Wu, Zili; Wang, Shuchang; Cui, Yiping
• Is Part Of: Applied physics express. Volume 10:Number 1(2017)
• Publication Date: 2016-12-08
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.011002
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Nonpolar a -plane AlGaN epi-layers were grown on a semi-polar r -plane sapphire substrate with an innovative two-way pulsed-flows metal organic chemical vapor deposition growth technology. A root-mean-square value of 1.79 nm was achieved, and the relative light transmittance of the a -plane AlGaN epi-layer was enhanced by 36.9%. These results reveal that the innovative growth method is able to improve the surface morphology and reduce the defect density in nonpolar a -plane Al x Ga1– x N epi-layers, particularly those with an Al composition greater than 0.5, which are key materials for the fabrication of nonpolar AlGaN-based high light emission efficiency deep-ultraviolet light-emitting diodes.