Hysteresis in the transfer characteristics of MoS2 transistors. (23rd October 2017)

• Record Type: Journal Article
• Authors: Di Bartolomeo, Antonio; Genovese, Luca; Giubileo, Filippo; Iemmo, Laura; Luongo, Giuseppe; Foller, Tobias; Schleberger, Marika
• Is Part Of: 2D materials. Volume 5:Number 1(2018)
• Publication Date: 2017-10-23
• Subjects: Molibdenum disulfide MoS2 -- transistor -- hysteresis -- mobility -- charge trapping -- memory -- defect; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/aa91a7
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trapping at the MoS2 /SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trapping, play an important role, besides H2 O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.