A convenient method of manufacturing liquid-gated MoS2 field effect transistors. (19th October 2017)

• Record Type: Journal Article
• Authors: Lin, Kabin; Yuan, Zhishan; Yu, Yu; Li, Kun; Li, Zhongwu; Sha, Jingjie; Li, Tie; Chen, Yunfei
• Is Part Of: Materials research express. Volume 4:Number 10(2017)
• Publication Date: 2017-10-19
• Subjects: molybdenum disulfide -- liquid-gated -- field effect transistor -- 2D materials transfer; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/aa90a4
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: In this paper, we present a simple and convenient method of manufacturing liquid-gated MoS2 field effect transistors (FETs). A Si3 N4 chip is firstly fabricated by the semiconductor manufacturing process, then the mechanical exfoliation MoS2 is transferred onto the Si3 N4 chip and is connected with the gold electrodes by depositing platinum to construct the MoS2 FETs. The liquid-gated is formed by injecting 0.1 M NaCl solution into reservoir to contact the back side of the Si3 N4 . Our measured results show that the contact properties between MoS2 and electrodes are in well condition and the liquid-gated MoS2 FETs have a high mobility that can reach up to 109 cm 2 V −1 s −1 .