Electronic structures and optical gain of dilute nitride GaAs nanowires. (20th August 2018)

• Record Type: Journal Article
• Authors: Xiong, Wen
• Is Part Of: Applied physics express. Volume 11:Number 9(2018)
• Publication Date: 2018-08-20
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.095001
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The electronic structures and optical gain of GaAs1− x N x nanowires are calculated via the band anticrossing model together with the eight-bandk ·p theory. We find that the optical gain spectra show an obvious red shift, and the gain increases slightly with increasing nitrogen content. The transverse magnetic (TM) gain is approximately 8.5 times larger than the transverse electric (TE) gain when the radius R is 3 nm, which indicates that GaAs1− x N x nanowires can be used as TM linearly polarized lasers in the near-infrared range. However, when R is 6 nm, the TM gain approaches the corresponding TE gain. In this case, GaAs1− x N x nanowires are not suitable for linearly polarized lasers.