Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment. (6th June 2017)

• Record Type: Journal Article
• Authors: Sarkar, Biplab; Haidet, Brian B.; Reddy, Pramod; Kirste, Ronny; Collazo, Ramon; Sitar, Zlatko
• Is Part Of: Applied physics express. Volume 10:Number 7(2017)
• Publication Date: 2017-06-06
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.071001
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Four orders of magnitude improvement in specific contact resistivity of Al-rich n-AlGaN grown on single crystal AlN substrates is achieved by surface treatment based on reactive ion etching (RIE). The ohmic contacts to as-grown Al-rich n-AlGaN/AlN exhibit a high contact resistance and nonlinearity due to a large Schottky barrier and low dislocation density. The RIE surface treatment reduces the barrier height at the free surface by ∼0.5 eV and is also expected to introduce a defective surface required for ohmic contact formation.