Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. (1st June 2018)

• Record Type: Journal Article
• Authors: Balakrishnan, Nilanthy; Steer, Elisabeth D; Smith, Emily F; Kudrynskyi, Zakhar R; Kovalyuk, Zakhar D; Eaves, Laurence; Patanè, Amalia; Beton, Peter H
• Is Part Of: 2D materials. Volume 5:Number 3(2018)
• Publication Date: 2018-06-01
• Subjects: indium selenide -- III–VI van der Waals layered crystals -- 2D materials -- physical vapour transport; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/aac479
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We demonstrate that γ -InSe and the α, β and γ phases of In2 Se3 can be grown epitaxially on ε -GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of Inx Sey depending on the position of the substrate within the furnace. The uniform cleaved surface of ε -GaSe enables the epitaxial growth of the Inx Sey layers, which are aligned over large areas. The Inx Sey epilayers are characterised using Raman, photoluminescence, x-ray photoelectron and electron dispersive x-ray spectroscopies. Each Inx Sey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~2 eV suitable for exploitation in electronics and optoelectronics.