Cite
HARVARD Citation
Feng, W. et al. (2018). A fast and zero-biased photodetector based on GaTe–InSe vertical 2D p–n heterojunction. 2D materials. p. . [Online].
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Feng, W. et al. (2018). A fast and zero-biased photodetector based on GaTe–InSe vertical 2D p–n heterojunction. 2D materials. p. . [Online].