Post annealing induced magnetic anisotropy in CoFeSi thin films on MgO(0 0 1). (1st February 2017)

• Record Type: Journal Article
• Authors: Guo, X B; Zuo, Y L; Cui, B S; Li, D; Yun, J J; Wu, K; Wang, T; Xi, L
• Is Part Of: Journal of physics. Volume 50:Number 8(2017)
• Publication Date: 2017-02-01
• Subjects: CoFeSi thin films -- annealing temperature -- magnetic anisotropy -- resonance frequency -- damping constant; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa58af
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Co61 Fe26 Si13 (CoFeSi) thin films were deposited on MgO(0 0 1) substrates by magnetron sputtering and were annealed at different temperatures ( T a ). X-ray diffraction revealed that the crystal structure varies from the as-deposited amorphous phase to the cubic phase when T a = 800 °C, indicating the re-crystallization process after annealing treatment. The static magnetic property measurements show a gradually four-fold cubic anisotropy dominating the magnetic anisotropy with the increasing T a . The ferromagnetic resonance technique based on vector network analyzer was utilized to analyze the dynamic magnetic properties. CoFeSi film annealed at 600 °C presents an obvious in-plane uniaxial magnetic anisotropy, and it presents a low effective damping constant of around 0.011 with a natural resonance frequency of around 3.4 GHz. However, the CoFeSi film annealed at 800 °C showed a strong cubic magnetocrystalline anisotropy and full-in-plane-direction workable natural resonance frequency at around 2.5 GHz.