Cite
HARVARD Citation
Singh, S. et al. (2017). Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET. Materials research express. p. . [Online].
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Singh, S. et al. (2017). Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET. Materials research express. p. . [Online].