Analytical models for GaN-based heterostructure-free normally off fin-shaped field-effect transistor. (12th January 2017)
- Record Type:
- Journal Article
- Title:
- Analytical models for GaN-based heterostructure-free normally off fin-shaped field-effect transistor. (12th January 2017)
- Main Title:
- Analytical models for GaN-based heterostructure-free normally off fin-shaped field-effect transistor
- Authors:
- Hu, Guangxi
Qiang, Haisheng
Hu, Shuyan
Liu, Ran
Zheng, Lirong
Zhou, Xing - Abstract:
- Abstract: Analytical models for threshold voltage and subthreshold swing of GaN-based fin-shaped field-effect transistors (FinFETs) are obtained. Analytical expressions for the drain-induced barrier lowering effect and threshold voltage roll-off effect are presented. The explicit expressions for threshold voltage and subthreshold swing make the model suitable for being embedded in circuit simulations and design tools.
- Is Part Of:
- Japanese journal of applied physics. Volume 56:Number 2(2017)
- Journal:
- Japanese journal of applied physics
- Issue:
- Volume 56:Number 2(2017)
- Issue Display:
- Volume 56, Issue 2 (2017)
- Year:
- 2017
- Volume:
- 56
- Issue:
- 2
- Issue Sort Value:
- 2017-0056-0002-0000
- Page Start:
- Page End:
- Publication Date:
- 2017-01-12
- Subjects:
- Physics -- Periodicals
621.05 - Journal URLs:
- http://iopscience.iop.org/1347-4065/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.7567/JJAP.56.021002 ↗
- Languages:
- English
- ISSNs:
- 0021-4922
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11079.xml