Current status of Ga2O3 power devices. (15th November 2016)

• Record Type: Journal Article
• Authors: Higashiwaki, Masataka; Murakami, Hisashi; Kumagai, Yoshinao; Kuramata, Akito
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 12(2016:Dec.)
• Publication Date: 2016-11-15
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.1202A1
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Gallium oxide (Ga2 O3 ) is an emerging wide-bandgap semiconductor for high-power, low-loss transistors and diodes by virtue of its excellent material properties and suitability for mass production. In this paper, we begin by discussing the material properties of Ga2 O3 that make it an attractive alternative to not only Si but also other wide-bandgap materials such as SiC and GaN. State-of-the-art Ga2 O3 -based devices that have been fabricated to date demonstrate the performance potential for power electronics applications.