Cite
HARVARD Citation
Soman, R. et al. (n.d.). Buried channel normally-off AlGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. Semiconductor science and technology. p. . [Online].
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Soman, R. et al. (n.d.). Buried channel normally-off AlGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. Semiconductor science and technology. p. . [Online].