Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology. (13th January 2017)

• Record Type: Journal Article
• Authors: Zhou, Y.; Lu, Y.; Hashimoto, R.; Nishimura, R.; Kishimoto, S.; Arai, Y.; Ouyang, Q.
• Is Part Of: Journal of instrumentation. Volume 12:Number 1(2017:Jan.)
• Page Start: C01037
• Page End: C01037
• Publication Date: 2017-01-13
• Subjects: X-ray detectors -- Pixelated detectors and associated VLSI electronics -- Solid state detectors; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/12/01/C01037
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: The overall noise performances and first synchrotron beam measurement results of CPIXETEG3b, the first counting type Silicon-On-Insulator (SOI) pixel sensor prototype without crosstalk issue, are reported. The prototype includes a 64 × 64 pixel matrix with 50 μ m pitch size. Each pixel consists of an N-in-P charge collection diode, a charge sensitive preamplifier, a shaper, a discriminator with thresholds adjustable by an in-pixel 4-bit DAC, and a 6-bit counter. The study was performed using the beam line 14A at KEK Photon Factory (KEK-PF) . The homogeneous response of the prototype, including charging-sharing effects between pixels were studied. 16 keV and 8 keV monochromatic small size ( ∼ 10 μ m diameter) X-ray beams were used for the charge sharing study, and a flat-field was added for homogenous response investigation. The overall detector homogeneity and the influence of basic detector parameters on charge sharing between pixels has been investigated.