Improved charge trapping characteristics of multilayered ZrxSi1−xO2 films with a bidirectional terraced bandgap structure. (18th September 2018)

• Record Type: Journal Article
• Authors: Tang, Zhenjie; Li, Rong; Zhang, Xiwei; Geng, Huijuan; Zang, Shuaipu; Zheng, Huiyuan; Lian, Mengchen
• Is Part Of: Applied physics express. Volume 11:Number 10(2018)
• Publication Date: 2018-09-18
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.104201
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A multilayered Zr x Si1− x O2 trapping layer with a bidirectional terraced bandgap structure is proposed for a charge-trapping memory device. It is observed that the bidirectional terraced bandgap structure changes the electron storage and loss behaviors, and a 15.8 V memory window along with a 2.03 × 10 13 cm −2 trap density, a low charge loss of 14.5% at 200 °C up to 10 5 s, a 120 °C turning temperature between charge-loss-insensitive and charge-loss-sensitive regions, and a high program/erase speed can be achieved. Hence, the formation of a bidirectional terraced bandgap structure is a promising means for future charge-trapping memory applications.