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HARVARD Citation
Fujikura, H. et al. (2018). Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy. Applied physics express. p. . [Online].
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Fujikura, H. et al. (2018). Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy. Applied physics express. p. . [Online].