Feasibility study of detection of dielectric breakdown of gate oxide film by using acoustic emission method. (7th November 2016)

• Record Type: Journal Article
• Authors: Kasashima, Yuji; Tabaru, Tatsuo; Uesugi, Fumihiko
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 12(2016:Dec.)
• Publication Date: 2016-11-07
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.128001
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: An in situ detection method for the dielectric breakdown of oxide films for MOS gates has been required in the plasma etching process. In this feasibility study, a conventional MOSFET device is used and an acoustic emission (AE) method is employed for the detection of the dielectric breakdown of a gate oxide film. A thin type AE sensor is attached at the backside of an electrostatic chuck (ESC), and the dielectric breakdown in a MOSFET, which is set on the ESC, is detected. The results demonstrate that the thin type AE sensor can detect the dielectric breakdown with an energy on the order of µJ.