Cite
HARVARD Citation
Han, D. et al. (2017). Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes. Applied physics express. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Han, D. et al. (2017). Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes. Applied physics express. p. . [Online].