The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions. (23rd January 2017)

• Record Type: Journal Article
• Authors: Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang
• Is Part Of: Journal of physics. Volume 50:Number 7(2017)
• Publication Date: 2017-01-23
• Subjects: tunneling magnetoresistance -- molecular magnetic tunnel junction -- optoelectronic properties -- graphyne; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa55b1
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Using density functional theory and the non-equilibrium Green's function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents.