Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application. (30th October 2017)

• Record Type: Journal Article
• Authors: Ghosh, Kankat; Das, S; Khiangte, K R; Choudhury, N; Laha, Apurba
• Is Part Of: Journal of physics. Volume 50:Number 47(2017)
• Publication Date: 2017-10-30
• Subjects: epitaxial Gd2O3 -- MOS-HEMT -- PA-MBE; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa8e7d
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We report structural and electrical properties of hexagonal Gd2 O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2 O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2 O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as [ 0 0 0 1 ] G d 2 O 3 | | [ 0 0 0 1 ] G a N and [ 1 1 ̄ 0 0 ] G d 2 O 3 | | [ 1 1 ̄ 0 0 ] G a N . X-ray photoelectron measurements of the valence bands revealed that Gd2 O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3 Ga0.7 N, respectively. Electrical measurements such as capacitance–voltage and leakage current characteristics further confirm that epi-Gd2 O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.