The impact of electrical contacts and contact-induced ultralow noise amplitudes in layered transistors. (20th October 2016)

• Record Type: Journal Article
• Authors: Hsu, Chih-Kai; Lin, Chi-Yi; Li, Wenwu; Sun, Huabin; Xu, Yong; Hu, Zhigao; Chang, Yuan-Ming; Suen, Yuen-Wuu; Lin, Yen-Fu
• Is Part Of: 2D materials. Volume 3:Number 4(2016)
• Publication Date: 2016-10-20
• Subjects: layered electronics -- PbSnS2 -- electrical contacts -- low-frequency noise -- noise amplitude; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/3/4/045015
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: Electrical contacts made of conducting channels with external circuitry significantly impact electronic performances, in particular for two-dimensional semiconductors. This work presents a systematic study of back-to-back Schottky contacts to a layered compound of semiconducting flakes through static and dynamic electrical measurements and the first demonstration of Schottky barrier-dominated, p-type PbSnS2 field-effect transistors. In the static analysis, the Schottky barrier height of the layered transistors can be modulated by applied electrostatic fields, while the contact-dominated fluctuations render to the 1/ f electric noise and induce a normalized noise amplitude in the order of 10 −9 –10 −8 . Such an ultralow-noise amplitude, which is never observed in other layered semiconducting transistors, is ascribed to the existence of Schottky barriers. Our experimental results provide a nuanced perspective for advancing the understanding of performance limit with increasing numbers of layers for electronic development.