Cite
HARVARD Citation
Wang, X. et al. (2018). Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells. Materials research express. p. . [Online].
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Wang, X. et al. (2018). Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells. Materials research express. p. . [Online].